2SC5757 silicon npn epitaxial vhf/uhf wide band amplifier ade-208-1396d (z) rev.4 jul. 2001 features ? super compact package: mfpak (1.4 x 0.8 x 0.59 mm) outline mfpak 1. emitter 2. base 3. collector 1 3 2 note: marking is ?we??.
2SC5757 rev.4, jul. 2001, page 2 of 10 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to base voltage v cbo 10 v collector to emitter voltage v ceo 3.5 v emitter to base voltage v ebo 1.5 v collector current i c 80 ma collector power dissipation pc 80 mw junction temperature tj 150 c storage temperature tstg ?55 to +150 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 10 ?? vi c = 10 a, i e = 0 collector cutoff current i cbo ?? 600 na v cb = 10 v, i e = 0 collector cutoff current i ceo ?? 200 na v ce = 3.5 v, r be = infinite emitter cutoff current i ebo ?? 100 na v eb = 1.5 v, i c = 0 dc current transfer ratio h fe 80 100 130 ? v ce = 1 v, i c = 5 ma collector output capacitance c ob 0.9 1.2 1.5 pf v cb = 1 v, i e = 0, f = 1 mhz gain bandwidth product f t 4.5 6.5 ? ghz v ce = 1 v, i c = 5 ma power gain pg 8 11 ? db v ce = 1 v, i c = 5 ma, f = 900 mhz noise figure nf ? 1.1 2.0 db v ce = 1 v, i c = 5 ma, f = 900 mhz
2SC5757 rev.4, jul. 2001, page 3 of 10 0 50 100 150 200 100 collector power dissipation pc (mw) collector power dissipation curve 10 100 200 0 120 collector current i c (ma) dc current transfer ratio h fe dc current transfer ratio vs. collector current 25 50 v ce = 1 v 0 0.4 0.6 1 collector current i c (ma) typical transfer characteristics 0 0.5 1 1.5 3.5 collector current i c (ma) typical output characteristics ambient temperature ta ( c) collector to emitter voltage v ce (v) base to emitter voltage v be (v) 0.2 0.8 v ce = 1 v 2.5 23 20 40 60 80 100 50 40 30 20 10 500 a i b = 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 10 20 30 40 50
2SC5757 rev.4, jul. 2001, page 4 of 10 1 10 100 1 2 5 10 20 50 100 0 4 8 12 16 20 collector current i c (ma) s 21 parameter |s 21 | 2 (db) s 21 parameter vs. collector current collector current i c (ma) power gain pg (db) power gain vs. collector current 4 8 12 16 20 0 25 20 50 v ce = 1 v f = 2 ghz v ce = 1 v f = 900 mhz 1.2 2.0 collector to base voltage v cb (v) collector output capacitance c ob (pf) collector output capacitance vs. collector to base voltage 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.6 1 2 5 10 20 50 100 0 4 8 12 16 20 collector current i c (ma) gain bandwidth product f t (ghz) gain bandwidth product vs. collector current v ce = 1 v f = 2 ghz i e = 0 f = 1 mhz
2SC5757 rev.4, jul. 2001, page 5 of 10 10 3 5 0 1 20 100 collector current i c (ma) noise figure nf (db) noise figure vs. collector current 25 50 4 2 1 v ce = 1v f = 900 mhz
2SC5757 rev.4, jul. 2001, page 6 of 10 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 0 30 60 90 120 150 180 -150 -90 -60 -30 -120 30 60 90 120 150 180 -150 -90 -60 -30 -120 10 5 4 3 2 1.5 1 .8 -2 -3 -4 -5 -10 .6 .4 .2 0 -.2 -.4 -.6 -.8 -1 -1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 8 / div. scale: 0.06 / div. 0 s 11 parameter vs. frequency s 21 parameter vs. frequency s 12 parameter vs. frequency s 22 parameter vs. frequency condition: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) ( i c = 5 ma) ( i c = 20 ma) condition: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) ( i c = 5 ma) ( i c = 20 ma) condition: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) ( i c = 5 ma) ( i c = 20 ma) condition: v ce = 1 v , z o = 50 ? 100 to 2000 mhz (100 mhz step) ( i c = 5 ma) ( i c = 20 ma)
2SC5757 rev.4, jul. 2001, page 7 of 10 s parameter (v ce = 1 v, i c = 5 ma, z o = 50 ? ? ? ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.797 ?40.0 14.26 154.3 0.048 69.8 0.881 ?28.5 200 0.695 ?75.2 11.44 133.4 0.081 54.5 0.709 ?52.2 300 0.638 ?100.7 9.03 119.6 0.099 46.6 0.559 ?69.4 400 0.594 ?117.6 7.23 110.7 0.109 42.7 0.457 ?81.5 500 0.571 ?130.8 6.00 103.8 0.116 41.1 0.388 ?91.3 600 0.558 ?140.3 5.13 98.8 0.122 41.1 0.336 ?99.7 700 0.548 ?148.5 4.43 94.6 0.128 41.2 0.300 ?107.0 800 0.545 ?154.4 3.93 90.9 0.134 42.6 0.274 ?113.5 900 0.539 ?160.1 3.52 88.0 0.139 43.6 0.254 ?120.0 1000 0.541 ?164.6 3.20 85.0 0.145 45.0 0.238 ?125.7 1100 0.542 ?169.1 2.93 82.5 0.150 46.3 0.227 ?130.8 1200 0.543 ?171.9 2.71 80.2 0.156 48.1 0.221 ?135.9 1300 0.546 ?175.6 2.53 77.9 0.163 49.1 0.213 ?141.1 1400 0.546 ?178.4 2.36 75.6 0.169 50.5 0.209 ?144.8 1500 0.552 179.4 2.23 73.8 0.176 51.8 0.207 ?149.5 1600 0.558 176.4 2.10 71.6 0.183 52.8 0.205 ?153.0 1700 0.558 174.2 2.00 70.1 0.191 54.0 0.206 ?156.9 1800 0.570 171.7 1.90 68.5 0.198 55.0 0.207 ?160.7 1900 0.577 169.6 1.81 66.6 0.206 56.1 0.210 ?163.9 2000 0.578 167.8 1.75 65.3 0.214 56.7 0.212 ?167.7
2SC5757 rev.4, jul. 2001, page 8 of 10 (v cb = 1 v, i c = 20 ma, z o = 50 ? ? ? ? ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.512 -94.1 30.18 133.2 0.031 60.2 0.643 -66.8 200 0.523 -134.9 18.31 112.6 0.044 54.5 0.459 -104.5 300 0.531 -151.8 12.60 102.9 0.054 57.1 0.386 -126.5 400 0.533 -161.4 9.53 97.8 0.065 60.5 0.355 -140.6 500 0.540 -168.0 7.67 93.7 0.076 63.2 0.341 -150.2 600 0.539 -172.3 6.43 90.7 0.088 65.5 0.333 -157.8 700 0.541 -176.7 5.49 88.2 0.100 66.6 0.330 -163.7 800 0.543 -179.7 4.83 86.0 0.111 67.8 0.328 -168.7 900 0.545 177.0 4.30 84.3 0.123 68.4 0.328 -172.9 1000 0.547 174.3 3.91 82.1 0.135 69.1 0.329 -176.7 1100 0.550 171.8 3.57 80.6 0.148 69.5 0.329 -180.0 1200 0.552 170.0 3.29 79.0 0.159 69.9 0.332 176.9 1300 0.557 167.3 3.05 77.5 0.172 69.8 0.334 174.2 1400 0.566 165.5 2.87 75.8 0.184 70.0 0.336 171.5 1500 0.570 163.7 2.68 74.4 0.197 70.0 0.339 169.2 1600 0.569 162.0 2.54 73.2 0.208 69.9 0.341 167.1 1700 0.570 160.2 2.41 71.4 0.220 69.5 0.345 164.7 1800 0.580 158.3 2.29 70.8 0.233 69.2 0.350 162.8 1900 0.588 157.6 2.19 69.2 0.244 69.4 0.355 161.0 2000 0.587 154.9 2.12 68.0 0.256 69.1 0.360 158.8
2SC5757 rev.4, jul. 2001, page 9 of 10 package dimensions 0.9 0.1 1.4 0.05 1.2 0.05 0.8 0.1 3-0.2 +0.1 ? 0.05 0.2 0.2 0.45 0.45 (0.1) (0.1) 0.6 max hitachi code jedec eiaj mass (reference value) mfpak ? ? 0.0016 g 0.15 +0.1 ? 0.05 as of january, 2001 unit: mm
2SC5757 rev.4, jul. 2001, page 10 of 10 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 4.0
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